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1

Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness

R. Khlil, A. El Hdiy, A.F. Shulekin, S.E. Tyaginov, M.I. Vexler

Journal:

Microelectronics Reliability

Year:

2004

Language:

english

File:

PDF, 272 KB

english, 2004

2

Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs

Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T.

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 1.37 MB

english, 2015

3

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

S.E. Tyaginov, I.A. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, Ch. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 912 KB

english, 2010

4

An analytical approach for physical modeling of hot-carrier induced degradation

S. Tyaginov, I. Starkov, H. Enichlmair, Ch. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 907 KB

english, 2011

5

[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Impact of gate oxide thickness variations on hot-carrier degradation

Tyaginov, S. E., Starkov, I. A., Triebl, O., Karner, M., Kernstock, Ch., Jungemann, C., Enichlmair, H., Park, J. M., Grasser, T.

Year:

2012

Language:

english

File:

PDF, 401 KB

english, 2012

6

[IEEE 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) - Singapore, Singapore (2010.07.5-2010.07.9)] 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Hot-carrier degradation modeling using full-band Monte-Carlo simulations

Tyaginov, S.E., Starkov, I.A., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, Ch., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.

Year:

2010

Language:

english

File:

PDF, 486 KB

english, 2010

7

[IEEE 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - South Lake Tahoe, CA, USA (2014.10.12-2014.10.16)] 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors

Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Kaczer, B., Ceric, H., Grasser, T.

Year:

2014

Language:

english

File:

PDF, 627 KB

english, 2014

8

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics--Part II: Theory

Jech, Markus, Ullmann, Bianka, Rzepa, Gerhard, Tyaginov, Stanislav, Grill, Alexander, Waltl, Michael, Jabs, Dominic, Jungemann, Christoph, Grasser, Tibor

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 4.30 MB

english, 2018

9

Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs

Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

Journal:

Year:

2018

Language:

english

File:

PDF, 545 KB

english, 2018

10

Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

Makarov, Alexander, Kaczer, Ben, Roussel, Philippe, Chasin, Adrian, Grill, Alexander, Vandemaele, Michiel, Hellings, Geert, El-Sayed, Al-Moatasem, Grasser, Tibor, Linten, Dimitri, Tyaginov, Stanislav

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.56 MB

english, 2019

11

Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon

I.V. Grekhov, G.G. Kareva, S.E. Tyaginov, M.I. Vexler

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 445 KB

english, 2007

12

Impact of O–Si–O bond angle fluctuations on the Si–O bond-breakage rate

Stanislav Tyaginov, Viktor Sverdlov, Ivan Starkov, Wolfgang Gös, Tibor Grasser

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 611 KB

english, 2009

13

The post-damage behavior of a MOS tunnel emitter transistor

S.E. Tyaginov, M.I. Vexler, A.F. Shulekin, I.V. Grekhov

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 568 KB

english, 2006

14

[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Charge-pumping extraction techniques for hot-carrier induced interface and oxide trap spatial distributions in MOSFETs

Starkov, I., Enichlmair, H., Tyaginov, S., Grasser, T.

Year:

2012

Language:

english

File:

PDF, 572 KB

english, 2012

15

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs

Starkov, Ivan, Ceric, Hajdin, Tyaginov, Stanislav, Grasser, Tibor, Enichlmair, Hubert, Park, Jong-Mun, Jungemann, Christoph

Year:

2011

Language:

english

File:

PDF, 3.21 MB

english, 2011

16

Hot-carrier degradation caused interface state profile—Simulation versus experiment

Starkov, I., Tyaginov, S., Enichlmair, H., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Ceric, H., Grasser, T.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 812 KB

english, 2011

17

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

Bina, Markus, Tyaginov, Stanislav, Franco, Jacopo, Rupp, Karl, Wimmer, Yannick, Osintsev, Dmitry, Kaczer, Ben, Grasser, Tibor

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.05 MB

english, 2014

18

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress

Starkov, I., Enichlmair, H., Tyaginov, S., Grasser, T.

Year:

2012

Language:

english

File:

PDF, 577 KB

english, 2012

19

[IEEE 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) - Singapore, Singapore (2010.07.5-2010.07.9)] 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations

Starkov, I.A., Tyaginov, S.E., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, Ch., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.

Year:

2010

Language:

english

File:

PDF, 1.69 MB

english, 2010

20

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Predictive and efficient modeling of hot-carrier degradation in nLDMOS devices

Sharma, Prateek, Tyaginov, Stanislav, Wimmer, Yannick, Rudolf, Florian, Rupp, Karl, Bina, Markus, Enichlmair, Hubert, Park, Jong-Mun, Ceric, Hajdin, Grasser, Tibor

Year:

2015

Language:

english

File:

PDF, 1.23 MB

english, 2015

21

[IEEE 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Bologna, Italy (2015.1.26-2015.1.28)] EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - A model for hot-carrier degradation in nLDMOS transistors based on the exact solution of the Boltzmann transport equation versus the drift-diffusion scheme

Sharma, Prateek, Tyaginov, Stanislav, Wimmer, Yannick, Rudolf, Florian, Enichlmair, Hubert, Park, Jong-Mun, Ceric, Hajdin, Grasser, Tibor

Year:

2015

Language:

english

File:

PDF, 574 KB

english, 2015

22

[IEEE 2015 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2015.10.11-2015.10.15)] 2015 IEEE International Integrated Reliability Workshop (IIRW) - On the temperature behavior of hot-carrier degradation

Tyaginov, S., Jech, M., Sharma, P., Franco, J., Kaczer, B., Grasser, T.

Year:

2015

Language:

english

File:

PDF, 336 KB

english, 2015

23

Analysis of the Features of Hot-Carrier Degradation in FinFETs

Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

Journal:

Year:

2018

Language:

english

File:

PDF, 895 KB

english, 2018

24

[IEEE ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Cracow, Poland (2019.9.23-2019.9.26)] ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

Makarov, Alexander, Linten, Dimitri, Tyaginov, Stanislav, Kaczer, Ben, Roussel, Philippe, Chasin, Adrian, Vandemaele, Michiel, Hellings, Geert, El-Sayed, Al-Moatasem, Jech, Markus, Grasser, Tibor

Year:

2019

Language:

english

File:

PDF, 5.41 MB

english, 2019

25

[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

Grill, A., Bury, E., Michl, J., Tyaginov, S., Linten, D., Grasser, T., Parvais, B., Kaczer, B., Waltl, M., Radu, I.

Year:

2020

File:

PDF, 3.12 MB

2020

26

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

Makarov, Alexander, Roussel, Philippe, Bury, Erik, Vandemaele, Michiel, Spessot, Alessio, Linten, Dimitri, Kaczer, Ben, Tyaginov, Stanislav

Journal:

Year:

2020

File:

PDF, 2.77 MB

2020

27

Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(1 1 1)

N.S. Sokolov, I.V. Grekhov, S. Ikeda, A.K. Kaveev, A.V. Krupin, K. Saiki, K. Tsutsui, S.E. Tyaginov, M.I. Vexler

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 636 KB

english, 2007

28

Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures

S.E. Tyaginov, M.I. Vexler, A.F. Shulekin, I.V. Grekhov

Journal:

Microelectronic Engineering

Year:

2006

Language:

english

File:

PDF, 319 KB

english, 2006

29

Tunnel charge transport within silicon in reversely-biased MOS tunnel structures

M.I. Vexler, A. El Hdiy, D. Grgec, S.E. Tyaginov, R. Khlil, B. Meinerzhagen, A.F. Shulekin, I.V. Grekhov

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 300 KB

english, 2006

30

Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution

S.E. Tyaginov, M.I. Vexler, A.F. Shulekin, I.V. Grekhov

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 361 KB

english, 2005

31

Degradation effects in the one-band-tunneling Au/CaF2/n-Si(111) MIS structures

M.I. Vexler, S.M. Suturin, S.E. Tyaginov, A.G. Banshchikov, N.S. Sokolov

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 312 KB

english, 2008

32

Al/SiO2(2.0–2.5 nm)/p-Si tunnel junction as a light emitter

N. Asli, S.V. Gastev, I.V. Grekhov, P. Seegebrecht, A.F. Shulekin, S.E. Tyaginov, M.I. Vexler, H. Zimmermann

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 298 KB

english, 1999

33

Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon

N. Asli, S.V. Gastev, I.V. Grekhov, P. Seegebrecht, A.F. Shulekin, S.E. Tyaginov, M.I. Vexler, H. Zimmermann

Journal:

Materials Science in Semiconductor Processing

Year:

2000

Language:

english

File:

PDF, 143 KB

english, 2000

34

Soft breakdown as a cause of current drop in an MOS tunnel structure

A. F. Shulekin, S. É. Tyaginov, R. Khlil, A. El Hdiy, M. I. Vexler

Journal:

Year:

2004

Language:

english

File:

PDF, 54 KB

english, 2004

35

Radiative recombination in a silicon MOS tunnel structure

N. Asli, M. I. Vexler, I. V. Grekhov, P. Seegebrecht, S. E. Tyaginov, A. F. Shulekin

Journal:

Year:

2004

Language:

english

File:

PDF, 97 KB

english, 2004

36

Influence of the insulator thickness inhomogeneity on the current-voltage characteristics of tunneling MOS structures

S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov

Journal:

Technical Physics Letters

Year:

2004

Language:

english

File:

PDF, 50 KB

english, 2004

37

Luminescence intensity monitoring in a MOS tunnel structure with inhomogeneous thickness of the insulator

S. E. Tyaginov, N. Asli, M. I. Vexler, A. F. Shulekin, P. Seegebrecht, I. V. Grekhov

Journal:

Technical Physics Letters

Year:

2005

Language:

english

File:

PDF, 57 KB

english, 2005

38

Influence of insulator thickness nonuniformity on the switching of the Al/SiO2/n-Si tunnel MOS structure at reverse bias

S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov

Journal:

Year:

2006

Language:

english

File:

PDF, 228 KB

english, 2006

39

A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO2

M. I. Vexler, S. É. Tyaginov, A. F. Shulekin

Journal:

Year:

2006

Language:

english

File:

PDF, 197 KB

english, 2006

40

Current-voltage characteristics of Al/SiO2/p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness

M. I. Vexler, S. E. Tyaginov, A. F. Shulekin, I. V. Grekhov

Journal:

Year:

2006

Language:

english

File:

PDF, 245 KB

english, 2006

41

Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data

S. É. Tyaginov, M. I. Vexler, I. V. Grekhov, V. Zaporojtchenko

Journal:

Year:

2007

Language:

english

File:

PDF, 224 KB

english, 2007

42

Static current-voltage characteristics of Au/CaF2/n-Si(111) MIS tunneling structures

S. M. Suturin, A. G. Banshchikov, N. S. Sokolov, S. E. Tyaginov, M. I. Vexler

Journal:

Year:

2008

Language:

english

File:

PDF, 336 KB

english, 2008

43

Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures

S.E. Tyaginov, M.I. Vexler, A. El Hdiy, K. Gacem, V. Zaporojtchenko

Journal:

Materials Science in Semiconductor Processing

Year:

2010

Language:

english

File:

PDF, 443 KB

english, 2010

44

Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer

Vexler, M. I., Sokolov, N. S., Suturin, S. M., Banshchikov, A. G., Tyaginov, S. E., Grasser, T.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 493 KB

english, 2009

45

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

M. I. Vexler, S. E. Tyaginov, Yu. Yu. Illarionov, Yew Kwang Sing…

Journal:

Year:

2013

Language:

english

File:

PDF, 318 KB

english, 2013

46

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

Vexler, M I, Tyaginov, S E, Shulekin, A F

Journal:

Journal of Physics Condensed Matter

Year:

2005

Language:

english

File:

PDF, 690 KB

english, 2005

47

[IEEE 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) - Madonna di Campiglio, Italy (2011.07.3-2011.07.7)] 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics - Analysis of worst-case hot-carrier conditions for n-type MOSFET

Starkov, Ivan, Ceric, Hajdin, Tyaginov, Stanislav, Grasser, Tibor

Year:

2011

Language:

english

File:

PDF, 1.49 MB

english, 2011

48

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation

Bina, M., Rupp, K., Tyaginov, S., Triebl, O., Grasser, T.

Year:

2012

Language:

english

File:

PDF, 399 KB

english, 2012

49

Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation

Pobegen, Gregor, Tyaginov, Stanislav, Nelhiebel, Michael, Grasser, Tibor

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 367 KB

english, 2013

50

Luminescence spectra of an Al∕SiO[sub 2]∕p-Si tunnel metal-oxide-semiconductor structure

Yoder, P. D., Vexler, M. I., Shulekin, A. F., Asli, N., Gastev, S. V., Grekhov, I. V., Seegebrecht, P., Tyaginov, S. E., Zimmermann, H.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 368 KB

english, 2005